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By Takashi Goto; Yi-Bing Cheng; Takashi Akatsu; Nihon Seramikkusu Kyōkai

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Extra info for Advanced engineering ceramics and composites : selected, peer reviewed papers from the 4th International Symposium on Advanced Ceramics, Osaka International Convention Center, November 14-18, 2010, Japan

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E. Fig. 1(a) and (b)), the interlayers show mostly equiaxed microstructure, which does not change remarkably with joining temperature. It is not surprised that the SiC grains inside interlayer grow gradually as the joining temperature increases from 1800 °C to 1900 °C, which is believed to be attributed to the solution-reprecipitation coarsening process [21, 22]. Note that the interlayers show good bonding with SiC bases from the microstructure observations, in particular in sample T-AYA90, where the interface is hard to identify if without the obvious difference in grain size.

Mat. Sci. 5969 [4] P. E. P. Haggerty, D. K. L. D. M. Kriven: J. Eur. Ceram. Soc. 2375 [5] T. Narushima, T. Goto and T. Hirai: J. Am. Ceram. Soc. 1386 [6] S. Tanigushi and K. Kurokawa: Kouon sanka no kiso to ouyou [in Japanese] (Uchida Rokakuho, Japan 2006). Key Engineering Materials Vol. jp Keywords: Silicon carbide; Joining; Tape cast; Microstructure; Mechanical properties. Abstract. SiC substrates were successfully bonded by tape-cast SiC-Al2O3-Y2O3 interlayers in the temperature range of 1800-1900 °C for 60 min at 15 MPa pressure in flowing Ar.

Ceram. Soc. 2375 [5] T. Narushima, T. Goto and T. Hirai: J. Am. Ceram. Soc. 1386 [6] S. Tanigushi and K. Kurokawa: Kouon sanka no kiso to ouyou [in Japanese] (Uchida Rokakuho, Japan 2006). Key Engineering Materials Vol. jp Keywords: Silicon carbide; Joining; Tape cast; Microstructure; Mechanical properties. Abstract. SiC substrates were successfully bonded by tape-cast SiC-Al2O3-Y2O3 interlayers in the temperature range of 1800-1900 °C for 60 min at 15 MPa pressure in flowing Ar. Based on microstructure observations, we find that the α-SiC interlayers result in equiaxed microstructure at all joining temperatures while the tape-cast β-SiC leads to a microstructure varying from a mixed characteristic to an elongated one with joining temperature.

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Advanced engineering ceramics and composites : selected, peer reviewed papers from the 4th International Symposium on Advanced Ceramics, Osaka International Convention Center, November 14-18, 2010, Japan by Takashi Goto; Yi-Bing Cheng; Takashi Akatsu; Nihon Seramikkusu Kyōkai


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